Electron-Phonon Coupling and its implication for the superconducting topological insulators

نویسندگان

  • Xiao-Long Zhang
  • Wu-Ming Liu
چکیده

The recent observation of superconductivity in doped topological insulators has sparked a flurry of interest due to the prospect of realizing the long-sought topological superconductors. Yet the understanding of underlying pairing mechanism in these systems is far from complete. Here we investigate this problem by providing robust first-principles calculations of the role of electron-phonon coupling for the superconducting pairing in the prime candidate CuxBi2Se3. Our results show that electron-phonon scattering process in this system is dominated by zone center and boundary optical modes, with coexistence of phonon stiffening and softening. While the calculated electron-phonon coupling constant λ suggests that Tc from electron-phonon coupling is 2 orders smaller than the ones reported on bulk inhomogeneous samples, suggesting that superconductivity may not come from pure electron-phonon coupling. We discuss the possible enhancement of superconducting transition temperature by local inhomogeneity introduced by doping.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators

Quantum-phase transitions between trivial insulators and topological insulators differ from ordinary metal-insulator transitions in that they arise from the inversion of the bulk band structure due to strong spin-orbit coupling. Such topological phase transitions are unique in nature as they lead to the emergence of topological surface states which are characterized by a peculiar spin texture t...

متن کامل

Strong energy-momentum dispersion of phonon-dressed carriers in the lightly doped band insulator SrTiO3

Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where simi...

متن کامل

Topological insulators are tunable waveguides for hyperbolic polaritons

We present a theoretical analysis showing that layered topological insulators, for example, Bi2Se3 are optically hyperbolic materials in the range of terahertz (THz) frequencies. As such, these topological insulators possess deeply subdiffractional, highly directional collective modes: hyperbolic phonon polaritons. We predict that in thin crystals the dispersion of these modes is split into dis...

متن کامل

Inelastic electron tunneling spectroscopy for topological insulators.

Inelastic electron tunneling spectroscopy is a powerful spectroscopy that allows one to investigate the nature of local excitations and energy transfer in the system of interest. We study inelastic electron tunneling spectroscopy for topological insulators and investigate the role of inelastic scattering on the Dirac node states on the surface of topological insulators. Local inelastic scatteri...

متن کامل

Measurement of an exceptionally weak electron-phonon coupling on the surface of the topological insulator Bi2Se3 using angle-resolved photoemission spectroscopy.

Gapless surface states on topological insulators are protected from elastic scattering on nonmagnetic impurities which makes them promising candidates for low-power electronic applications. However, for widespread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 5  شماره 

صفحات  -

تاریخ انتشار 2015